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CY62128EV30LL-45ZAXI
+BOMIC SRAM 1MBIT PARALLEL 32STSOP
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ManufacturerCypress Semiconductor Corp
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Mfr. Part #CY62128EV30LL-45ZAXI
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Datasheet CY62128EV30LL-45ZAXI DataSheet
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Package TFSOP-32
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In Stock2874
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Specifications
| Attribute | Value |
| Package / Case | Tray |
| Series | MoBL® |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 1Mb (128K x 8) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Overview
Description
Operating at a voltage range of 2.2V to 3.6V, the CY62128EV30LL-45ZAXI ensures efficient power consumption without compromising on performance. It features a fast access time of 45 ns, which allows for quick read and write operations. The device is built with advanced process technology, ensuring data retention and reliability even in challenging environments.
The CY62128EV30LL-45ZAXI is available in a 32-pin TSOP package, which is compact and easy to integrate into circuit boards. Its low power usage, coupled with high-speed performance, makes it a versatile choice for designers looking to enhance their system's memory capabilities.
Equivalent
1. Alliance Memory AS6C1008-55PCN
2. ISSI IS62C1024AL-45N
3. Renesas (formerly Intersil) IS61C1024AL-45N
4. GSI Technology GS71024TP-10
These equivalents have similar specifications in terms of capacity, power consumption, and speed but may vary in terms of packaging and operating temperature ranges. Always verify compatibility with your specific application requirements.
Pinout
The pin functions are as follows:
- A0-A16: Address inputs used to select a specific memory location.
- DQ0-DQ7: Data input/output pins for reading from or writing data to the memory.
- CE#: Chip Enable input, active low. It enables the chip when low.
- OE#: Output Enable input, active low. It controls the data output buffers during a read operation.
- WE#: Write Enable input, active low. It controls the write operations to the memory.
- VCC: Power supply pin, typically operates at 2.2V to 3.6V.
- VSS: Ground pin.
This SRAM is designed for low power consumption and has a data retention voltage down to 2.0V. It is suitable for applications requiring high-speed access and low power usage, such as battery-powered devices.