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CY62167DV30LL-55ZXI
+BOMIC SRAM 16MBIT PARALLEL 48TSOP I
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ManufacturerCypress Semiconductor Corp
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Mfr. Part #CY62167DV30LL-55ZXI
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Package PG-TSOP-48
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In Stock5904
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Specifications
| Attribute | Value |
| Package / Case | Bulk,Tray |
| Series | MoBL® |
| Part Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 16Mb (1M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 2.2V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Overview
Description
Its key features include automatic power-down when deselected, data retention voltage down to 1.5V, and TTL-compatible inputs and outputs. The device is suitable for applications requiring high reliability and fast access times, such as in telecommunications, networking equipment, and industrial controls. Its industrial temperature range of -40°C to +85°C ensures reliable performance in harsh environments.
The CY62167DV30LL-55ZXI comes in a 48-pin TSOP I package, making it suitable for space-constrained designs. Its combination of low power consumption, high speed, and robust performance makes it an ideal choice for modern electronic systems needing reliable memory solutions.
Equivalent
1. AS6C1616 from Alliance Memory
2. IS62WV25616BLL from ISSI (Integrated Silicon Solution, Inc.)
3. BS616LV4017 from GigaDevice
These alternatives offer similar specifications in terms of memory capacity, power consumption, and operational speed, though specific electrical characteristics and package types may vary slightly. Always verify compatibility with your specific application requirements.
Features
1. Low Power Consumption: Offers standby current of 2 µA, making it highly power-efficient.
2. High Speed: Operates with an access time of 55 ns, suitable for high-performance applications.
3. Single Power Supply: Operates on a single 2.2V to 3.6V power supply, simplifying power management.
4. Temperature Range: Designed for industrial temperature range from -40°C to +85°C, suitable for various environmental conditions.
5. Data Retention Voltage: Retains data at a voltage as low as 1.5V.
6. Packaging: Available in 48-ball very thin fine-pitch ball grid array (VFBGA) package for efficient space utilization.
These features make it ideal for applications requiring reliable memory with low power demands, such as battery-powered devices.
Pinout
1. Data Input/Output (I/O) Pins: There are 8 data I/O pins, named I/O0 to I/O7, used for data input and output operations.
2. Address Pins: There are 21 address pins, A0 to A20, used to address the 2M memory locations available in the chip.
3. Control Pins:
- CE (Chip Enable): Activates the chip when low.
- OE (Output Enable): Controls the output buffer when low.
- WE (Write Enable): Enables write operations when low.
4. Power Supply Pins:
- VCC: Connected to the power supply.
- VSS: Ground pin.
This configuration allows the CY62167DV30LL-55ZXI to perform efficient memory storage operations with fast access times, making it suitable for various applications requiring reliable SRAM.
Manufacturer
Application
1. Embedded Systems: Utilized for data storage and fast data retrieval in microcontroller-based systems.
2. Industrial Control: Employed in automation equipment where reliability and quick access to data are crucial.
3. Telecommunications: Used in networking devices for buffering and caching data.
4. Medical Devices: Supports applications requiring reliable memory with low power consumption.
5. Consumer Electronics: Implemented in devices like digital cameras and audio players for temporary data storage.
6. Automotive Electronics: Suitable for use in automotive systems due to its wide temperature range and robustness.
Its low power consumption and fast access times make it ideal for battery-operated and high-performance applications.