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IPB036N12N3GATMA1
+BOMMOSFET N-CH 120V 180A TO263-7
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ManufacturerInfineon Technologies
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Mfr. Part #IPB036N12N3GATMA1
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Datasheet IPB036N12N3GATMA1 DataSheet
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In Stock2450
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Specifications
| Attribute | Value |
| Series | OptiMOS™ |
| Part Status | Active |
| Base Product Number | IPB036 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
| Power Dissipation (Max) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Overview
Description
The IPB036N12N3GATMA1 is a high-performance N-channel MOSFET from Infineon's OptiMOS™ 3 power MOSFET series. Key features include:
- Voltage Rating: 30V
- Current Rating: 36A (continuous)
- Low RDS(on): 3.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for efficiency in power applications
- Package: PG-TDSON-8 (thermally enhanced)
Designed for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics, it offers low conduction losses and high thermal performance.
For detailed specs, refer to Infineon's datasheet.
- Voltage Rating: 30V
- Current Rating: 36A (continuous)
- Low RDS(on): 3.6mΩ (max at VGS=10V)
- Fast Switching: Optimized for efficiency in power applications
- Package: PG-TDSON-8 (thermally enhanced)
Designed for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics, it offers low conduction losses and high thermal performance.
For detailed specs, refer to Infineon's datasheet.
Equivalent
Equivalent products to the IPB036N12N3GATMA1 (Infineon 120V, 36A MOSFET) include:
- IRFB4368PbF (International Rectifier, 100V, 130A)
- STP80NF12 (STMicroelectronics, 120V, 80A)
- AUIRFB4368 (Vishay, 100V, 130A)
- IPP120N12N3G (Infineon, 120V, 120A)
Check datasheets for exact compatibility in your application.
- IRFB4368PbF (International Rectifier, 100V, 130A)
- STP80NF12 (STMicroelectronics, 120V, 80A)
- AUIRFB4368 (Vishay, 100V, 130A)
- IPP120N12N3G (Infineon, 120V, 120A)
Check datasheets for exact compatibility in your application.
Features
The IPB036N12N3GATMA1 is a high-performance N-channel MOSFET with the following key features:
- Voltage Rating: 120V
- Current Rating: 36A (continuous)
- Low On-Resistance (RDS(on)): 3.6 mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency applications
- Logic-Level Gate Drive: Compatible with 5V drive signals
- Package: TO-263-7 (D2PAK), suitable for power applications
- Low Gate Charge (QG): Enhances efficiency in switching circuits
- AEC-Q101 Qualified: Automotive-grade reliability
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.
- Voltage Rating: 120V
- Current Rating: 36A (continuous)
- Low On-Resistance (RDS(on)): 3.6 mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency applications
- Logic-Level Gate Drive: Compatible with 5V drive signals
- Package: TO-263-7 (D2PAK), suitable for power applications
- Low Gate Charge (QG): Enhances efficiency in switching circuits
- AEC-Q101 Qualified: Automotive-grade reliability
Ideal for DC-DC converters, motor drives, and power management in automotive/industrial systems.
Pinout
The IPB036N12N3GATMA1 is a 12V, 36A OptiMOS™ 3 power MOSFET from Infineon in a TO-263-7 (D²PAK-7) package.
- Pin Count: 7 pins (though some are internally connected).
- Functions:
- Pins 1, 3, 5, 7: Drain (D) – connected internally for high current handling.
- Pin 2: Gate (G) – controls switching.
- Pins 4, 6: Source (S) – return path for current.
Key features:
- Low RDS(on) (3.6 mΩ max at 10V VGS).
- Optimized for high-efficiency power switching (e.g., DC-DC converters, motor drives).
For detailed specs, refer to the [Infineon datasheet](https://www.infineon.com).
- Pin Count: 7 pins (though some are internally connected).
- Functions:
- Pins 1, 3, 5, 7: Drain (D) – connected internally for high current handling.
- Pin 2: Gate (G) – controls switching.
- Pins 4, 6: Source (S) – return path for current.
Key features:
- Low RDS(on) (3.6 mΩ max at 10V VGS).
- Optimized for high-efficiency power switching (e.g., DC-DC converters, motor drives).
For detailed specs, refer to the [Infineon datasheet](https://www.infineon.com).
Manufacturer
The IPB036N12N3GATMA1 is a power MOSFET manufactured by Infineon Technologies, a leading German semiconductor company specializing in power electronics, automotive systems, and IoT solutions. Infineon is known for high-performance components used in energy-efficient applications, industrial automation, and automotive technologies.
This specific MOSFET is part of Infineon's OptiMOS™ 3 series, designed for high efficiency in power conversion applications like DC-DC converters and motor drives.
Company Profile:
- Name: Infineon Technologies
- Headquarters: Neubiberg, Germany
- Focus: Power semiconductors, microcontrollers, sensors, and security ICs.
- Key Markets: Automotive, industrial, renewable energy, and consumer electronics.
Infineon is a major player in the semiconductor industry, emphasizing innovation in energy efficiency and mobility.
This specific MOSFET is part of Infineon's OptiMOS™ 3 series, designed for high efficiency in power conversion applications like DC-DC converters and motor drives.
Company Profile:
- Name: Infineon Technologies
- Headquarters: Neubiberg, Germany
- Focus: Power semiconductors, microcontrollers, sensors, and security ICs.
- Key Markets: Automotive, industrial, renewable energy, and consumer electronics.
Infineon is a major player in the semiconductor industry, emphasizing innovation in energy efficiency and mobility.
Application
The IPB036N12N3GATMA1 is a 12V, 36A MOSFET from Infineon's OptiMOS™ 3 series, optimized for high efficiency and power density. Key application areas include:
- DC-DC Converters: Used in telecom, server, and industrial power supplies.
- Motor Control: Drives in automotive, robotics, and industrial systems.
- Battery Management: Protection circuits in EVs and energy storage.
- Synchronous Rectification: Improves efficiency in SMPS and solar inverters.
- Load Switching: Fast switching in UPS and power distribution.
Its low RDS(on) and compact package make it ideal for high-performance, space-constrained designs.
- DC-DC Converters: Used in telecom, server, and industrial power supplies.
- Motor Control: Drives in automotive, robotics, and industrial systems.
- Battery Management: Protection circuits in EVs and energy storage.
- Synchronous Rectification: Improves efficiency in SMPS and solar inverters.
- Load Switching: Fast switching in UPS and power distribution.
Its low RDS(on) and compact package make it ideal for high-performance, space-constrained designs.
Package
The IPB036N12N3GATMA1 is a power MOSFET in a TO-263-7 (D²PAK) package. This surface-mount package offers high power dissipation and is commonly used in high-current applications like power supplies and motor drives. It features a low RDS(on) and is designed for efficient switching performance.
