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ISC027N10NM6ATMA1
+BOMTRENCH >=100V PG-TDSON-8
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ManufacturerInfineon Technologies
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Mfr. Part #ISC027N10NM6ATMA1
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Datasheet ISC027N10NM6ATMA1 DataSheet
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In Stock4536
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Specifications
| Attribute | Value |
| Series | OptiMOS™ 6 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 192A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 116µA |
| Gate Charge (Qg) (Max) @ Vgs | 72.5 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V |
| Power Dissipation (Max) | 3W (Ta), 217W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
| Base Product Number | ISC027N |
Overview
Description
ISC027N10NM6ATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features low on-resistance, enabling efficient switching and reduced power loss, making it ideal for use in DC-DC converters, motor drives, and power supply circuits.
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). This MOSFET's construction allows it to handle high-frequency operations, contributing to enhanced efficiency in electronic designs.
Applications include renewable energy systems, electric vehicles, and consumer electronics, where effective thermal management and energy efficiency are crucial.
Overall, ISC027N10NM6ATMA1 is suitable for engineers and designers seeking reliable and efficient MOSFET solutions for modern electronic applications.
Key specifications typically include a maximum drain-source voltage (V_DS), a specified continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). This MOSFET's construction allows it to handle high-frequency operations, contributing to enhanced efficiency in electronic designs.
Applications include renewable energy systems, electric vehicles, and consumer electronics, where effective thermal management and energy efficiency are crucial.
Overall, ISC027N10NM6ATMA1 is suitable for engineers and designers seeking reliable and efficient MOSFET solutions for modern electronic applications.
Equivalent
The ISC027N10NM6ATMA1 is a 100V, 27A N-channel MOSFET. Equivalent products include the STP10NK100Z, IRF1010E, and MTP10N100E. Ensure to verify specifications, including V_DS, I_D, R_DS(on), and package type for compatibility in your application.
Features
The ISC027N10NM6ATMA1 is a high-performance N-channel MOSFET designed for various applications, including power management and conversion. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle substantial voltage levels.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 27A, making it suitable for high-current applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 27 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for effective switching control.
5. Package Type: It comes in a DPAK package, facilitating easy integration into compact designs.
6. High-Speed Switching: The device supports fast switching speeds, making it ideal for applications in switching power supplies and DC-DC converters.
These features make the ISC027N10NM6ATMA1 suitable for a wide range of power electronic applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle substantial voltage levels.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 27A, making it suitable for high-current applications.
3. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 27 mΩ at a gate-source voltage (V_GS) of 10V, enhancing efficiency by reducing power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for effective switching control.
5. Package Type: It comes in a DPAK package, facilitating easy integration into compact designs.
6. High-Speed Switching: The device supports fast switching speeds, making it ideal for applications in switching power supplies and DC-DC converters.
These features make the ISC027N10NM6ATMA1 suitable for a wide range of power electronic applications.
Pinout
The ISC027N10NM6ATMA1 is a N-channel MOSFET with a pin count of 4. Its primary functions include switching and amplifying electronic signals in various applications such as power management and motor control.
The pin configuration is typically as follows:
1. Gate (G) - Controls the MOSFET's switching state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body (B) - Usually internally connected to the source, providing a reference for the gate voltage.
This MOSFET is designed for applications requiring high efficiency and low on-resistance, making it suitable for high-speed switching and power conversion tasks.
The pin configuration is typically as follows:
1. Gate (G) - Controls the MOSFET's switching state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Body (B) - Usually internally connected to the source, providing a reference for the gate voltage.
This MOSFET is designed for applications requiring high efficiency and low on-resistance, making it suitable for high-speed switching and power conversion tasks.
Manufacturer
The ISC027N10NM6ATMA1 is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of products including power semiconductors, microcontrollers, sensors, and automotive solutions. The company focuses on providing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power management, connectivity, and security, catering to the demands of a rapidly evolving technology landscape. The ISC027N10NM6ATMA1 specifically falls into the category of power MOSFETs, which are used in applications that require efficient power conversion and management.
Application
The ISC027N10NM6ATMA1 is a N-channel MOSFET designed for high-efficiency power applications. Its primary application areas include power management in industrial systems, automotive power supplies, DC-DC converters, and renewable energy systems such as solar inverters. It is also suitable for motor control, LED drivers, and various consumer electronics due to its low on-resistance and high-speed switching capabilities, enhancing energy efficiency and thermal performance.
Package
The ISC027N10NM6ATMA1 is packaged in a TO-220 form factor. This package type is commonly used for power devices, providing good thermal performance and ease of mounting to heatsinks.
