MT28FW02GBBA1HPC-0AAT

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MT28FW02GBBA1HPC-0AAT

+BOM

IC FLASH 2GBIT PARALLEL 64LBGA

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #MT28FW02GBBA1HPC-0AAT

  • In Stock4268

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Specifications

Attribute Value
Part Status Active
Base Product Number MT28FW02
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Voltage - Supply 1.7V ~ 3.6V
Operating Temperature -40°C ~ 105°C (TA)
Mounting Type Surface Mount
Package / Case 64-LBGA
Supplier Device Package 64-LBGA (11x13)
Packaging Tray
Access Time 105 ns
Grade Automotive
Qualification AEC-Q100

Overview

Description

The MT28FW02GBBA1HPC-0AAT is a NAND Flash memory device developed by Micron Technology. It is a part of the company's serial NAND portfolio, designed to provide high-density storage solutions suitable for a variety of applications. This device offers a storage capacity of 2 gigabits (Gb) and utilizes a single-level cell (SLC) architecture, ensuring high reliability and performance. It supports a wide range of operating temperatures, making it ideal for industrial and consumer electronics.
The MT28FW02GBBA1HPC-0AAT features a Serial Peripheral Interface (SPI) for data transfer, which enhances its compatibility with a broad array of microcontrollers and processors. This interface also simplifies the design and integration process in various systems. The device is configured for low-power consumption, making it suitable for battery-operated devices and applications where energy efficiency is crucial.
Overall, the MT28FW02GBBA1HPC-0AAT is well-suited for applications requiring dependable, compact, and efficient data storage, such as in automotive systems, networking equipment, and consumer electronics.

Equivalent

The MT28FW02GBBA1HPC-0AAT is a 2Gb (256MB) SLC NAND Flash memory chip from Micron. Equivalent products could include similar SLC NAND Flash memory chips from other manufacturers like Toshiba's TC58NVG2S0H, Samsung's K9F2G08U0F, or Hynix's H27UAG8T2BTR. These alternatives should have similar specifications in terms of capacity, interface, and package type. Always verify compatibility with your specific application requirements before selecting a substitute.

Features

The MT28FW02GBBA1HPC-0AAT is a NAND Flash memory device from Micron. It features a storage capacity of 2GB and utilizes SLC (Single-Level Cell) technology for high endurance and reliability. This NAND flash operates with a voltage range of 1.7V to 1.95V and supports asynchronous interface. The device offers a page size of 2,112 bytes, which includes 2,048 bytes of data and 64 bytes of spare area for error correction and other functions. It supports block management with a block size of 128KB. The MT28FW02GBBA1HPC-0AAT is designed for industrial applications and operates within a temperature range of -40°C to +85°C. It is packaged in a TSOP (Thin Small Outline Package) for compact integration into various electronic devices.

Pinout

The MT28FW02GBBA1HPC-0AAT is a NAND Flash memory device manufactured by Micron Technology. It features a package with 63 pins. This device is designed for storing and retrieving data through NAND interface and is typically used in applications such as data storage for mobile devices, embedded systems, and other consumer electronics.
The primary functions of this NAND Flash memory include reading, writing, and erasing data. It supports a wide range of operations to manage data efficiently and is designed with features that improve data integrity and performance, such as error correction codes (ECC) and wear leveling. The device operates over a wide temperature range and is optimized for low power consumption, making it suitable for battery-powered applications.
For detailed technical specifications and pin functions, refer to the official datasheet provided by Micron Technology, as it will contain comprehensive information regarding electrical characteristics, timing diagrams, and pin configurations.

Manufacturer

The MT28FW02GBBA1HPC-0AAT is manufactured by Micron Technology, Inc. Micron is an American company known for producing semiconductor devices, specifically memory and storage solutions. The company develops a wide range of products, including DRAM, NAND flash memory, and other semiconductor components used in computing, consumer electronics, automotive, and industrial applications. Micron is considered one of the leading companies in the memory and storage industry, contributing to advancements in data processing and storage technologies.

Application

The MT28FW02GBBA1HPC-0AAT is a NAND Flash memory chip commonly used in various applications requiring reliable and high-capacity storage. Its primary application areas include consumer electronics like smartphones, tablets, and digital cameras, where it serves as storage for operating systems, applications, and media. It is also utilized in industrial and automotive sectors for data logging, firmware storage, and infotainment systems, offering robust performance in harsh environments. Additionally, the chip is employed in data centers and enterprise storage solutions to enhance data management and retrieval speeds. Its compact form factor and high endurance make it suitable for use in embedded systems where space and reliability are crucial.

Package

The MT28FW02GBBA1HPC-0AAT is a NAND Flash memory chip from Micron Technology. It typically comes in a BGA (Ball Grid Array) package, which is common for high-density memory devices, offering high performance and compact size suitable for embedded applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT28FW02GBBA1HPC-0AAT?
A: It offers a 2Gbit density organized as 128M x 16 bits, suitable for high-density NOR Flash applications.


Q: What voltage supply range does this NOR Flash device support?
A: It operates from 1.7V to 3.6V, enabling flexible use in both low-voltage and standard-voltage designs.


Q: Is the MT28FW02GBBA1HPC-0AAT qualified for automotive applications?
A: Yes, it has an Automotive grade and AEC-Q100 qualification, supporting harsh environments from -40°C to 105°C.


Q: What is the typical access time for this memory chip?
A: The access time is 105 ns, ensuring fast parallel read operations for code execution or data storage.


Q: Which memory interface does this device use?
A: It uses a Parallel memory interface (128M x 16), compatible with legacy NOR Flash bus architectures.


Q: What package form factor is available for mounting?
A: It comes in a 64-LBGA (11x13mm) package for surface mount assembly, suitable for compact PCB layouts.


Q: How is the device typically supplied and handled in production?
A: It is shipped in Tray packaging, ideal for automated pick-and-place during high-volume manufacturing.


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