MT29F256G08AUCABH3-10ITZ:A

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MT29F256G08AUCABH3-10ITZ:A

+BOM

IC FLASH 256GBIT PAR 100LBGA

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #MT29F256G08AUCABH3-10ITZ:A

  • In Stock4917

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Specifications

Attribute Value
Part Status Active
Base Product Number MT29F256G08
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 256Gbit
Memory Organization 32G x 8
Memory Interface Parallel
Clock Frequency 100 MHz
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 100-LBGA
Supplier Device Package 100-LBGA (12x18)
Packaging Tray

Overview

Description

The MT29F256G08AUCABH3-10ITZ:A is a NAND Flash memory device manufactured by Micron Technology. It is part of their high-performance NAND Flash series, optimized for use in a variety of electronic applications, including mobile devices, solid-state drives (SSDs), and other data storage solutions. This particular model features a 256Gb (gigabit) capacity, leveraging multi-level cell (MLC) technology to store multiple bits per cell, enhancing data density without significantly increasing physical space requirements.
Key specifications include a toggle-mode interface, which provides faster data transfer rates, improving overall performance. It also supports advanced error correction algorithms to ensure data integrity, making it reliable for intensive read/write operations. The device operates within a wide temperature range, making it suitable for industrial applications as well.
The MT29F256G08AUCABH3-10ITZ:A is designed to deliver a balance of cost, performance, and reliability, making it an ideal choice for manufacturers looking to integrate high-capacity storage solutions in their products.

Equivalent

The MT29F256G08AUCABH3-10ITZ:A is a NAND flash memory chip manufactured by Micron. Equivalent products would typically include NAND flash memory chips from other manufacturers with similar specifications, such as:
1. Samsung's K9F2G08U0M
2. Toshiba's TH58NVG2S3HTA00
3. Hynix's H27UBG8T2ATR-BC
These alternatives should match in terms of capacity, interface, and performance characteristics to ensure compatibility in applications. Always verify the specifications and compatibility before replacing components.

Features

The MT29F256G08AUCABH3-10ITZ:A is a NAND Flash memory chip manufactured by Micron Technology. It features a capacity of 256 gigabits, providing ample storage for various applications. This chip utilizes multi-level cell (MLC) technology, which enables the storage of more than one bit of data per cell, enhancing its storage density and efficiency. The device operates with a voltage range of 2.7V to 3.6V, making it suitable for a variety of electronic devices. It supports asynchronous I/O interface, ensuring compatibility with numerous systems.
The chip is designed for industrial temperature ranges, specifically from -40°C to +85°C, making it reliable for use in harsh environmental conditions. Its package type is a 63-ball BGA (Ball Grid Array), which offers a compact and robust form factor for integration into complex circuit boards. The NAND Flash is known for its compatibility with a wide range of applications, including solid-state drives (SSDs), mobile devices, and embedded systems, due to its high endurance, reliability, and performance characteristics.

Pinout

The MT29F256G08AUCABH3-10ITZ:A is a NAND Flash memory chip manufactured by Micron Technology. This specific model has a pin count of 48. It generally comes in a TSOP (thin small-outline package) that is commonly used for flash memory chips.
As for its function, this chip is used for data storage. It has a capacity of 256 gigabits (32 gigabytes) and is designed to store large amounts of data in a non-volatile manner, meaning the data is retained even when the power is turned off. The chip operates with a single level cell (SLC) architecture, which provides higher endurance and reliability compared to multi-level cell designs. It is commonly used in applications such as solid-state drives (SSDs), USB flash drives, and other embedded systems that require reliable, high-density storage solutions.

Manufacturer

The MT29F256G08AUCABH3-10ITZ:A is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a leading global company in the semiconductor industry, specializing in the production of memory and storage solutions. Their product portfolio includes DRAM, NAND flash memory, and other semiconductor components, which are integral to a wide range of electronic devices and systems, including personal computers, mobile devices, data centers, and automotive electronics. Micron is known for its innovation in memory technology, contributing significantly to advancements in storage capacity, speed, and energy efficiency.

Application

The MT29F256G08AUCABH3-10ITZ:A is a NAND Flash memory chip commonly used in a variety of applications, including smartphones, tablets, SSDs (Solid State Drives), and other consumer electronics requiring data storage. It is also employed in industrial applications for data logging, embedded systems, and IoT (Internet of Things) devices. Its high-density storage capability makes it suitable for use in media players, digital cameras, and automotive infotainment systems where large amounts of data storage are necessary. Additionally, it may be used in networking equipment and enterprise storage solutions, providing reliable and efficient data retention and retrieval.

Package

The MT29F256G08AUCABH3-10ITZ:A is a NAND Flash memory component from Micron, typically featuring a Ball Grid Array (BGA) package type.

Frequently Asked Questions


Q: What is the memory density and organization of this NAND Flash?
A: It has a 256Gbit density with a 32G x 8-bit organization, suitable for high-capacity storage applications.


Q: Is this component suitable for industrial temperature environments?
A: Yes, it operates from -40°C to 85°C, making it ideal for rugged industrial designs.


Q: What is the supply voltage range for this device?
A: The voltage supply range is 2.7V to 3.6V, compatible with standard 3.3V logic systems.


Q: Does this NAND support single-level cell (SLC) technology?
A: Yes, it uses SLC technology, offering higher endurance and reliability compared to MLC or TLC.


Q: What is the interface type and maximum clock frequency?
A: It uses a parallel interface with a 100 MHz clock frequency for fast data transfer.


Q: What package option is available for this Flash memory?
A: It comes in a 100-LBGA surface mount package with dimensions of 12x18 mm.


Q: Is this memory volatile or non-volatile?
A: It is non-volatile, meaning data is retained even when power is removed.


Q: What packaging format is used for shipping?
A: It is supplied in a Tray packaging, ideal for automated assembly lines.


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