MT29F4G01ABBFDWB-IT:F

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MT29F4G01ABBFDWB-IT:F

+BOM

IC FLASH 4GBIT SPI 83MHZ 8UPDFN

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #MT29F4G01ABBFDWB-IT:F

  • In Stock2153

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Specifications

Attribute Value
Part Status Active
Base Product Number MT29F4G01
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 4Gbit
Memory Organization 4G x 1
Memory Interface SPI
Clock Frequency 83 MHz
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 8-UDFN
Supplier Device Package 8-UPDFN (8x6) (MLP8)
Packaging Tray

Overview

Description

The MT29F4G01ABBFDWB-IT:F is a NAND Flash memory chip manufactured by Micron Technology. It's part of the MT29F series, designed for data storage applications requiring high-density, non-volatile memory. This specific chip offers 4 gigabits (Gb) of storage capacity, organized in a single-level cell (SLC) architecture, which provides reliable performance and endurance compared to multi-level cell designs.
Typically used in applications such as embedded systems, consumer electronics, and industrial devices, this NAND Flash chip operates efficiently in a wide range of temperatures (-40°C to +85°C), making it suitable for industrial environments. It boasts a small package size, enhancing its utility in space-constrained applications.
Key features include a fast read/write speed, robust data retention, and resistance to wear, often augmented by error-correcting code (ECC) capabilities to ensure data integrity. The interface is compatible with various controllers, which facilitates integration in diverse systems. Overall, the MT29F4G01ABBFDWB-IT:F is valued for its balance of performance, reliability, and capacity.

Equivalent

The MT29F4G01ABBFDWB-IT:F is a 4Gb NAND Flash memory chip by Micron. Equivalent products can include the Samsung K9F4G08U0D, Toshiba TH58NVG4D4ETA20, and Hynix HY27UF084G2M. These chips have similar storage capacities and are typically used in consumer electronics, SSDs, and other data storage applications. Always check the specific datasheets for compatibility in terms of package, speed, and electrical characteristics before considering as substitutes.

Features

The MT29F4G01ABBFDWB-IT:F is a NAND Flash memory device developed by Micron Technology. It features a storage capacity of 4 gigabits (Gb) and is organized as a single-level cell (SLC) structure. This device is designed for industrial applications, offering an extended temperature range from -40°C to +85°C, which makes it suitable for use in harsh environments.
Key features of the MT29F4G01ABBFDWB-IT:F include:
- A typical page size of 2,112 bytes, with 2,048 bytes for data and 64 bytes for spare area.
- Block size of 64 pages, amounting to 128KB.
- Interface that supports asynchronous I/O operations.
- Advanced wear-leveling and error correction capabilities to enhance data integrity and longevity.
- Compatibility with standard NAND Flash protocols, enabling ease of integration into various systems.
- Low power consumption, making it suitable for battery-operated devices.
These features make the MT29F4G01ABBFDWB-IT:F ideal for industrial, automotive, and consumer applications where reliable data storage and performance are required.

Pinout

The MT29F4G01ABBFDWB-IT:F is a NAND Flash memory chip from Micron. It comes in a standard 48-pin TSOP (Thin Small Outline Package). The primary function of this chip is to store data, and it is commonly used in applications requiring non-volatile storage, like solid-state drives, smartphones, and other embedded systems.
The chip features 4Gb (gigabit) of storage capacity organized in a x8 configuration, meaning the data bus is 8 bits wide. The pins include power supply inputs, ground pins, data bus pins (I/O pins), control pins (such as Chip Enable, Write Enable, Read Enable), and address pins among others. These pins are used to control the read/write operations, manage power, and communicate data to and from the memory.
For specific pin functions and ordering, you would need to refer to the datasheet or technical documentation provided by Micron for exact details.

Manufacturer

The MT29F4G01ABBFDWB-IT:F is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company is known for its DRAM, NAND, and NOR flash memory products, which are used in a wide range of applications, including computers, mobile devices, automotive systems, and data centers. Micron's innovations play a crucial role in advancing technology by enabling faster and more efficient data processing and storage, contributing significantly to the development of cutting-edge digital products and services.

Application

The MT29F4G01ABBFDWB-IT:F is a NAND flash memory chip commonly used in various electronic applications. Its primary application areas include:
1. Embedded Systems: Used for storing firmware and data in devices such as industrial controllers and consumer electronics.
2. Mobile Devices: Provides storage solutions for smartphones, tablets, and wearable technology.
3. Automotive Systems: Utilized in infotainment systems, navigation, and other in-car electronics.
4. Networking Equipment: Supports data storage for routers, switches, and other networking devices.
5. Solid-State Drives (SSDs): Acts as a key component in SSDs for faster data access and storage efficiency.
These applications benefit from the chip's reliability, durability, and high storage density.

Package

The MT29F4G01ABBFDWB-IT:F is a NAND Flash memory chip manufactured by Micron Technology. It comes in a TSOP (Thin Small-Outline Package) type, which is a rectangular, surface-mounted integrated circuit package with leads extending from the sides. This package is designed for efficient space utilization, making it suitable for various electronic applications requiring non-volatile memory storage.

Frequently Asked Questions


Q: What is the memory density and organization of the MT29F4G01ABBFDWB-IT:F?
A: It is a 4Gbit NAND Flash organized as 4G x 1 bit, using a single-level cell (SLC) architecture for improved endurance.


Q: What is the operating voltage range for this device?
A: The voltage supply range is 1.7V to 1.95V, suitable for low-power applications requiring a 1.8V rail.


Q: Does this part support a standard serial peripheral interface (SPI)?
A: Yes, it features an SPI memory interface, enabling easy integration with microcontrollers and reducing pin count requirements.


Q: What is the maximum clock frequency for SPI communication?
A: The SPI clock frequency operates up to 83 MHz, allowing for high-speed data transfer in read and write operations.


Q: What is the operating temperature range for this component?
A: It is rated for an industrial temperature range of -40°C to +85°C (TA), ensuring reliability in harsh environments.


Q: In which package is this memory device available?
A: It comes in an 8-pin UDFN package (8-UPDFN, 8x6mm, MLP8), designed for surface mount assembly with a compact footprint.


Q: What type of memory technology is used in this part?
A: It utilizes FLASH - NAND (SLC) technology, providing non-volatile storage with high endurance and fast program/erase cycles.


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