MT41K128M16JT-125:K

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MT41K128M16JT-125:K

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IC DRAM 2GBIT PARALLEL 96FBGA

  • ManufacturerMicron Technology Inc.

  • Mfr. Part #MT41K128M16JT-125:K

  • In Stock4425

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Specifications

Attribute Value
Part Status Active
Base Product Number MT41K128M16
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (8x14)
Packaging Tray
Access Time 13.75 ns

Overview

Description

The MT41K128M16JT-125:K is a DRAM module from Micron Technology, specifically part of their DDR3L (Double Data Rate 3 Low Voltage) SDRAM lineup. It features a 2Gb density organized as 128M x 16, making it suitable for high-performance computing applications requiring efficient memory management. Operating at a clock speed of 933 MHz (DDR3-1866), it provides a data transfer rate of 1866 MT/s, enhancing system performance in data-intensive tasks.
The module runs at a lower voltage of 1.35V compared to standard DDR3, resulting in reduced power consumption and heat generation, which is advantageous for energy-sensitive applications. It is packaged in a standard 96-ball FBGA (Fine-Pitch Ball Grid Array) design, facilitating integration into various systems while ensuring reliable connectivity and signal integrity.
With features like programmable CAS latency, burst length, and easy refresh options, the MT41K128M16JT-125:K is versatile for use in desktops, laptops, and servers, providing a balance of speed, power savings, and efficiency.

Equivalent

The MT41K128M16JT-125:K is a DDR3 SDRAM chip from Micron Technology. Equivalent products from other manufacturers could include:
1. Samsung K4B2G1646Q-MCK0
2. Hynix H5TQ2G63GFR
3. Nanya NT5CB128M16FP-DI
These chips share similar specifications like capacity, speed, and voltage. However, it is important to check detailed datasheets for exact compatibility in specific applications.

Features

The MT41K128M16JT-125:K is a DRAM module known as a 2Gb DDR3L (Double Data Rate 3 Low Voltage) SDRAM (Synchronous Dynamic Random-Access Memory). Key features include:
1. Density and Organization: It has a density of 2 Gigabits and is organized as 128 Megabits x 16.
2. Speed and Bandwidth: The module supports a data rate of up to 1600 MT/s (megatransfers per second) and provides high bandwidth with its double data rate technology.
3. Voltage: It operates at a low voltage of 1.35V, reducing power consumption compared to standard 1.5V DDR3 modules.
4. Package: The DRAM comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package, which is compact and suitable for high-density applications.
5. Operating Temperature: It is designed to operate in a temperature range suitable for various applications, ensuring reliability and performance.
6. Compatibility: The module is compatible with systems that support DDR3L, offering backward compatibility with standard DDR3.
These features make the MT41K128M16JT-125:K suitable for a variety of applications, including computing and consumer electronics, where efficiency and performance are crucial.

Pinout

The MT41K128M16JT-125:K is a DRAM component from Micron Technology, specifically a 2Gb DDR3L (Double Data Rate 3 Low Voltage) SDRAM. This component is packaged typically in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. The "128M16" in its designation indicates that it is organized as 128 megabits by 16 bits.
The primary function of this DRAM is to provide high-speed temporary storage for data in computing and electronic devices, supporting up to 8 internal banks for concurrent operations and having a data rate of up to 1600 MT/s (million transfers per second). The device operates at a lower voltage of 1.35V, making it suitable for energy-efficient applications. The MT41K128M16JT-125:K is used in systems requiring fast, high-density memory with reduced power consumption, commonly in PCs, servers, and mobile devices.

Manufacturer

The manufacturer of the MT41K128M16JT-125:K is Micron Technology, Inc. Micron is a leading American multinational corporation specializing in the production of memory and storage solutions. It designs and manufactures a wide range of semiconductor devices, including DRAM (Dynamic Random Access Memory), NAND flash memory, and other memory and storage solutions. Micron's products are widely used in various applications, from consumer electronics and mobile devices to data centers and automotive systems. The company is known for its innovation in memory technology and its contributions to advancements in computing and data management.

Application

The MT41K128M16JT-125:K is a DDR3 SDRAM chip commonly used in applications requiring high-speed data processing and storage. Key application areas include personal computers, laptops, gaming consoles, and servers, where it contributes to efficient memory management and fast data retrieval. It is also used in networking equipment, telecommunications devices, and embedded systems, providing enhanced performance for tasks such as data buffering and caching. Additionally, its use extends to consumer electronics, including smart TVs and set-top boxes, ensuring smooth functioning of multimedia applications.

Package

The MT41K128M16JT-125:K is a DRAM chip from Micron, specifically a 2Gb DDR3L SDRAM. It comes in a 96-ball FBGA (Fine-pitch Ball Grid Array) package, which is designed for surface mounting on circuit boards. The FBGA package helps ensure a compact design, suitable for high-density applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT41K128M16JT-125:K?
A: This device has a 2Gbit density organized as 128M words x 16 bits, suitable for high-bandwidth data applications.


Q: What is the operating voltage range for this DDR3L SDRAM?
A: It operates at a low voltage of 1.283V to 1.45V, supporting power-sensitive designs compliant with DDR3L standards.


Q: What is the maximum clock frequency and access time of this component?
A: The maximum clock frequency is 800 MHz, with a CAS latency-based access time of 13.75 ns for reliable high-speed data transfer.


Q: What package type does the MT41K128M16JT-125:K use?
A: It comes in a 96-TFBGA package (96-FBGA, 8x14 mm), designed for surface mount assembly in compact PCB layouts.


Q: What is the operating temperature range for this memory chip?
A: It is rated for commercial operation from 0°C to 95°C (TC case temperature), ensuring stability in standard computing environments.


Q: Is this component compatible with dual-channel or multi-rank configurations?
A: Yes, as a 128M x16 DDR3L device, it supports parallel interface signaling for multi-rank or dual-channel memory architectures.


Q: What is the available packaging format for procurement?
A: The device is supplied in a tray packaging format, suitable for volume assembly and automated pick-and-place processes.


Q: Does this part support programmable features like CAS latency?
A: While not verified as programmable by DigiKey, standard DDR3L SDRAMs allow mode register configuration for timing parameters like CAS latency.


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