NT6CL512T32AM-H1

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NT6CL512T32AM-H1

+BOM

1.14V~1.3V 16Gbit 933MHz BGA-178 Memory (ICs) RoHS

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Specifications

Attribute Value
Packaging BGA-178
Clock Frequency 933MHz
Memory Size 16Gbit
Operating Temperature -30℃~+105℃
Voltage - Supply 1.14V~1.3V

Overview

Description

The NT6CL512T32AM-H1 is a high-performance, low-power DRAM module designed for use in various computing applications that require efficient memory solutions. This module is part of the DDR4 SDRAM family and offers substantial improvements in speed, bandwidth, and power efficiency compared to its predecessors.
Key features of the NT6CL512T32AM-H1 include a 512Mb density, a 32-bit data width, and a compact form factor, making it suitable for space-constrained devices. It operates at a voltage level of 1.2V, minimizing power consumption and heat generation, which is ideal for battery-operated and energy-conscious applications.
The module supports multiple memory organization configurations and offers high data transfer rates, enhancing overall system performance. It is designed to be compatible with a wide range of processors and platforms, ensuring flexibility and ease of integration into existing systems.
Overall, the NT6CL512T32AM-H1 is an excellent choice for applications that demand reliable, high-speed memory with low power usage, such as mobile devices, embedded systems, and various consumer electronics.

Equivalent

The NT6CL512T32AM-H1 is a NAND Flash memory chip. Equivalent products can include similar NAND Flash memory chips from other manufacturers like Micron, Samsung, or Western Digital (SanDisk). Comparable models would match in terms of storage capacity, interface, performance, and packaging. To find an exact equivalent, it's important to consider specific technical specifications such as density, voltage, and form factor. Cross-referencing datasheets from other manufacturers is a good approach to finding a suitable equivalent.

Features

The NT6CL512T32AM-H1 is a DRAM module featuring a 16GB capacity, organized as 512Mx32 bits. It employs LPDDR4X technology, which is known for its low power consumption and high performance. The module operates with a core supply voltage of 0.6 V and an I/O supply voltage of 1.1 V, making it energy-efficient. It supports data rates of up to 4267 MT/s, ensuring fast data processing capabilities. The NT6CL512T32AM-H1 also features a 200-ball FBGA package, providing a compact and reliable form factor. Additionally, it supports various features such as deep power down, auto temperature compensation, and on-die termination (ODT), enhancing overall performance and efficiency in mobile and compact device applications.

Pinout

The NT6CL512T32AM-H1 is a DRAM component from Nanya Technology Corporation, specifically a 16Gb DDR4 SDRAM. It is organized as 512M x 32 bits. The package for this DRAM chip is generally a 96-ball FBGA (Fine-Pitch Ball Grid Array).
The function of this DRAM is to provide high-speed data storage and retrieval for various computing applications. It supports DDR4 interface speeds, offering improved performance over previous DDR3 memory technologies. The memory is typically used in applications that require high bandwidth, such as computing systems, networking devices, and servers.
For specific details on pin count and configuration, the manufacturer's datasheet would provide detailed diagrams and descriptions of each pin's function, including address lines, data lines, power, clock, and control signals. This information is critical for integrating the DRAM into a larger system or board design.

Manufacturer

The NT6CL512T32AM-H1 is manufactured by Nanya Technology Corporation. Nanya Technology is a Taiwanese company that specializes in the design, development, production, and sales of dynamic random-access memory (DRAM) products. It is one of the leading DRAM manufacturers globally, focusing on offering memory solutions for various applications, including PCs, laptops, servers, mobile devices, and other consumer electronics. Nanya is known for its commitment to technological innovation and quality in the semiconductor industry.

Application

The NT6CL512T32AM-H1 is a high-performance LPDDR4X DRAM chip designed for applications requiring efficient power consumption and fast data processing. Key application areas include mobile devices, such as smartphones and tablets, where it supports advanced features and multitasking with low power use. It's also used in wearable technology, IoT devices, and automotive systems that demand reliable performance with extended battery life. Additionally, it can be utilized in networking equipment and industrial automation systems that require high-speed data transfer and processing efficiency. Its compact form factor and thermal efficiency make it ideal for space-constrained and heat-sensitive applications.

Package

The NT6CL512T32AM-H1 is a DRAM component that typically comes in a BGA (Ball Grid Array) package type. BGA packages are known for providing high density and performance, suitable for compact electronic devices.

Frequently Asked Questions


Q: What is the memory density and data rate of the NT6CL512T32AM-H1?
A: It offers a 16Gbit memory density and supports a maximum clock frequency of 933MHz for high-speed data transfer.


Q: What voltage range does this DDR component require?
A: It operates within a supply voltage range of 1.14V to 1.3V, adhering to low-power DDR memory standards.


Q: What is the operating temperature range for this memory?
A: The component is rated for industrial temperature applications, from -30°C up to +105°C.


Q: What package type does the NT6CL512T32AM-H1 use?
A: It is housed in a 178-ball BGA (Ball Grid Array) package for compact and reliable surface-mount assembly.


Q: Is this memory suitable for high-reliability or automotive applications?
A: With its extended temperature range (-30°C to +105°C), it is well-suited for industrial and certain automotive-grade environments.


Q: Can this component be used in data-intensive computing systems?
A: Yes, its 16Gbit capacity and 933MHz clock frequency make it ideal for networking, servers, and embedded computing requiring high bandwidth.


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