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S29GL01GT10FHI010
+BOMFLASH - NOR MEMORY IC 1GB (128M
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ManufacturerCypress Semiconductor Corp
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Mfr. Part #S29GL01GT10FHI010
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Datasheet S29GL01GT10FHI010 DataSheet
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In Stock4529
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Specifications
| Attribute | Value |
| Series | GL-T |
| PartStatus | Active |
| BaseProductNumber | S29GL01 |
| DigiKeyProgrammable | Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 1Gbit |
| MemoryOrganization | 128M x 8 |
| MemoryInterface | Parallel |
| WriteCycleTime-Word,Page | 60ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 64-LBGA |
| SupplierDevicePackage | 64-FBGA (13x11) |
| Packaging | Tray |
| AccessTime | 100 ns |
Overview
Description
Key features include a high-performance read speed, advanced sector protection, and a flexible architecture that supports concurrent read/write operations. The device employs a NOR flash memory technology, which is known for fast read speeds and high endurance, making it ideal for code storage and execution in place (XiP).
The S29GL01GT10FHI010 is also designed to withstand harsh environmental conditions and offers a range of security features, such as hardware-based sector protection. Its package options and wide temperature range make it versatile for various form factors and operational environments.
Equivalent
1. Micron MT28EW01GABA1LPC-0SIT
2. Winbond W25Q128JV
3. Macronix MX29LV320EBTI-70G
4. SST (Microchip) SST39VF3201C-70-4C-LKE
These alternatives should be evaluated for specific parameters such as speed, voltage, and package compatibility to ensure they meet your requirements.
Features
1. Capacity: 1 Gigabit (128 Megabytes).
2. Architecture: Uniform 128KB sector architecture for easy erasure and rewriting.
3. Interface: Parallel interface for high-speed data access.
4. Read Speed: Fast access time of 90 nanoseconds.
5. Programming: Supports programming operations with typical times of 1.5ms per byte.
6. Voltage: Operates at a single 3.0-3.6V supply voltage.
7. Endurance: Offers high endurance with 100,000 program/erase cycles per sector.
8. Security: Includes a SecSi (Secured Silicon) Sector and Persistent Protection Bits for enhanced security.
9. Industry Standards: Compatible with Common Flash Interface (CFI) and provides support for Advanced Sector Protection (ASP).
10. Package: Available in TSOP and BGA packages, suitable for various applications.
These features make it suitable for applications requiring reliable, high-speed data storage and access, such as embedded systems, automotive electronics, and industrial applications.
Pinout
Pin Count:
- The S29GL01GT10FHI010 comes in a 64-pin Fine-pitch Ball Grid Array (FBGA) package.
Function:
- This device is used for storing code and data in a non-volatile format.
- It features a NOR Flash architecture which is ideal for read-intensive applications.
- The memory is organized as 128 Megabytes (MB) with a typical sector size of 128 KB (kilobytes).
- It supports various interface standards, including asynchronous page mode, and has a random read time of around 90 ns.
- The device includes advanced sector protection options, which allow for the prevention of unwanted programming or erasure.
- This Flash memory is commonly used in embedded systems, telecommunications, automotive applications, and other fields requiring reliable non-volatile memory storage.
This concise description provides a basic understanding of the S29GL01GT10FHI010’s pin count and its general function.