2N7002E vs 2N7002VA-7-F

This in-depth comparison of the 2N7002E and 2N7002VA-7-F provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Replacement verdict

Compatible functional replacement candidate

The 2N7002E and 2N7002VA-7-F are both 60 V N-channel enhancement-mode MOSFETs in SOT-23 packages with comparable on-resistance and gate-threshold characteristics, making the 2N7002VA-7-F a viable functional substitute for the 2N7002E in most low-power switching and level-shifting applications. Designers should confirm continuous drain-current margin and thermal derating for their specific load conditions before committing to the replacement.

Drain-Source Voltage Rating High match
Continuous Drain Current Validation required
Package Type High match
On-Resistance High match

Review the critical differences →

Parts at a glance

Part A

2N7002E

Panasonic Electronic Components

Lifecycle
Active
Stock
3552 PCS
Package
SOT-23-3
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ
Part B

2N7002VA-7-F

Diodes Incorporated

Lifecycle
Active
Stock
4202 PCS
Package
SOT-666
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification 2N7002E 2N7002VA-7-F
Supplier - Diodes Incorporated
Part Status Obsolete Obsolete
FET Type N-Channel 2 N-Channel (Dual)
FET Feature - Standard
Drain to Source Voltage (Vdss) 60 V 60V
Current - Continuous Drain(Id) @ 25°C 300mA (Ta) 280mA
Rds On(Max) @ Id Vgs 3Ohm @ 100mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th)(Max) @ Id 3V @ 250µA 2.5V @ 250µA
Input Capacitance(Ciss)(Max) @ Vds 40 pF @ 10 V 50pF @ 25V
Power - Max - 150mW
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Technology MOSFET (Metal Oxide) -
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V -
Gate Charge(Qg)(Max) @ Vgs 0.8 nC @ 4.5 V -
Vgs(Max) ±20V -
Power Dissipation (Max) 350mW (Ta) -
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