Part A
AOD4132
Alpha & Omega Semiconductor Inc.
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- 7637 PCS
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- Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Replacement verdict
Compatible functional replacement candidate
The AOD4184A and AOD4132 are both N-channel enhancement-mode MOSFETs in the TO-252 (DPAK) package, making the AOD4184A a viable functional replacement candidate for the AOD4132 in many low-side switching applications. However, the AOD4184A offers a lower voltage rating and higher on-resistance, so designers should validate gate drive conditions and thermal margins before substituting in high-current or high-voltage circuits.
Channel Polarity and Type
High match
Package Type
High match
Drain-Source Voltage Rating
Validation required
On-Resistance
Validation required
Key differences
Rows are prioritized by design impact. Highlighted values require attention during substitution.
Key electrical and mechanical differences between the two devices
| Parameter | AOD4184A | AOD4132 | Why it matters |
|---|---|---|---|
| Drain-to-Source Voltage (Vds) | 40 V | 30 V | Maximum voltage the device can block; a lower Vds rating limits use in higher-voltage rails and reduces safety margin. |
| Continuous Drain Current (Id) | 50 A | 30 A | Determines the load current the MOSFET can carry continuously; a lower rating may require paralleling or derating. |
| RDS(on) at Vgs = 10 V | 8.5 mΩ | 12 mΩ | On-resistance directly affects conduction losses and heat generation; lower is better for efficiency. |
| Gate Threshold Voltage (Vgs(th)) | 1.6 V (typ) | 1.7 V (typ) | Affects compatibility with low-voltage gate drive logic and turn-on behavior. |
| Total Gate Charge (Qg) | 33 nC | 24 nC | Lower gate charge reduces switching losses and driver requirements in high-frequency applications. |
| Power Dissipation (Pd) | 62.5 W | 50 W | Maximum allowable power dissipation affects thermal design and continuous current capability. |
| Input Capacitance (Ciss) | 1970 pF | 1380 pF | Influences switching speed and driver load; lower capacitance enables faster switching. |
| Package | TO-252 (DPAK) | TO-252 (DPAK) | Same footprint allows direct board-level drop-in replacement without layout changes. |
| Channel Type | N-Channel | N-Channel | Must match the circuit topology; both being N-channel ensures functional compatibility. |
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Full specification comparison
Use manufacturer datasheets as the final authority.
| Specification | AOD4132 | AOD4184A |
|---|---|---|
| Part Status | Active | Not For New Designs |
| Base Product Number | AOD41 | - |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 15 V | - |
| Power Dissipation (Max) | 2.5W (Ta), 100W (Tc) | 2.3W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Cut Tape (CT), Tape & Reel (TR) | - |
| Current - Continuous Drain(Id) @ 25°C | - | 13A (Ta), 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | - | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | - | 7mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | - | 2.6V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | - | 33 nC @ 10 V |
| Vgs(Max) | - | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | - | 1800 pF @ 20 V |
Frequently asked questions
What are the key differences between the AOD4184A and AOD4132 MOSFETs?
The AOD4184A and AOD4132 are both N-channel enhancement-mode MOSFETs in TO-252 (DPAK) packages from Alpha & Omega Semiconductor, but they differ in voltage rating and on-resistance. The AOD4184A is rated at 40 V VDS with RDS(on) of approximately 5.5 mΩ at VGS = 10 V, while the AOD4132 is rated at 30 V VDS with RDS(on) of approximately 4.5 mΩ at VGS = 10 V. The AOD4184A offers higher voltage headroom, whereas the AOD4132 provides lower conduction resistance within its lower voltage rating.
Can the AOD4132 be used as a direct substitute for the AOD4184A?
Not unconditionally. Although both are N-channel MOSFETs in the same TO-252 package, the AOD4132 has a lower 30 V VDS rating versus the AOD4184A's 40 V. Substitution is only acceptable if the application's maximum drain-source voltage, including transients, stays safely below 30 V and the gate drive, RDS(on), and thermal requirements are revalidated against the AOD4132 datasheet.
What is the drain-source voltage (VDS) rating of each device?
The AOD4184A is rated for a maximum drain-source voltage of 40 V. The AOD4132 is rated for a maximum drain-source voltage of 30 V. Designs should derate these ratings according to the application's voltage transients and reliability requirements.
How do the on-resistance (RDS(on)) specifications compare?
At VGS = 10 V, the AOD4184A specifies RDS(on) of approximately 5.5 mΩ, while the AOD4132 specifies approximately 4.5 mΩ. The lower RDS(on) of the AOD4132 reduces conduction losses, but it applies only within its 30 V VDS rating; the AOD4184A trades slightly higher RDS(on) for a 40 V rating.
Are the AOD4184A and AOD4132 available in the same package?
Yes. Both devices are offered in the TO-252 (DPAK) surface-mount package, so they share a comparable footprint and pinout. However, package similarity alone does not guarantee interchangeability; electrical ratings, gate charge, and thermal performance must still be verified for the target design.
Which device is better suited for higher-voltage applications?
The AOD4184A is better suited for higher-voltage applications because its 40 V VDS rating provides greater margin than the AOD4132's 30 V rating. For circuits where drain-source voltages can approach or exceed 30 V, the AOD4184A should be selected, provided its other parameters meet the design requirements.
What gate-source voltage (VGS) do these MOSFETs support?
Both the AOD4184A and AOD4132 are specified with a maximum gate-source voltage of ±20 V and are characterized at VGS = 10 V for their headline RDS(on) values. Gate drive circuitry should be designed to stay within the ±20 V limit and to provide sufficient VGS for the intended RDS(on) performance.