AON6994 vs AON6908ALS_101 Comparison
This in-depth comparison of the AON6994 and AON6908ALS_101 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
VDFN-8
Description
MOSFET 2N-CH 30V 19A/26A 8DFN
MOSFET N-CH
Part Status
Obsolete
Obsolete
Base Product Number
AON699
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Technology
MOSFET (Metal Oxide)
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Configuration
2 N-Channel (Dual) Asymmetrical
-
FET Feature
Logic Level Gate
Standard
Drain to Source Voltage (Vdss)
30V
30V
Current - Continuous Drain (Id) @ 25°C
19A, 26A
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Rds On (Max) @ Id, Vgs
5.2mOhm @ 20A, 10V
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Vgs(th) (Max) @ Id
2.2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
820pF @ 15V
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Power - Max
3.1W
1.9W (Ta), 31W (Tc), 2.1W (Ta), 78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
Packaging
Cut Tape (CT), Tape & Reel (TR)
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Supplier
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Alpha & Omega Semiconductor Inc.
FET Type
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2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain(Id) @ 25°C
-
11.5A (Ta), 46A (Tc), 17A (Ta), 80A (Tc)
Rds On(Max) @ Id Vgs
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8.9mOhm @ 11.5A, 10V, 3.6mOhm @ 20A, 10V
Vgs(th)(Max) @ Id
-
2.4V @ 250µA, 2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
-
15nC @ 10V, 38nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds
-
1110pF @ 15V, 5260pF @ 15V
