AON6998 vs AON6994
This in-depth comparison of the AON6994 and AON6998 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
WDFN-8
Description
MOSFET 2N-CH 30V 19A/26A 8DFN
MOSFET 2N-CH 30V 19A/26A DFN
Part Status
Obsolete
-
Base Product Number
AON699
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Technology
MOSFET (Metal Oxide)
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Configuration
2 N-Channel (Dual) Asymmetrical
-
FET Feature
Logic Level Gate
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Drain to Source Voltage (Vdss)
30V
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Current - Continuous Drain (Id) @ 25°C
19A, 26A
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Rds On (Max) @ Id, Vgs
5.2mOhm @ 20A, 10V
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Vgs(th) (Max) @ Id
2.2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
13nC @ 10V
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Input Capacitance (Ciss) (Max) @ Vds
820pF @ 15V
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Power - Max
3.1W
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Operating Temperature
-55°C ~ 150°C (TJ)
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Mounting Type
Surface Mount
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Packaging
Cut Tape (CT), Tape & Reel (TR)
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Supplier
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Alpha & Omega Semiconductor Inc.
ProductStatus
-
Active
FETType
-
2 N-Channel (Dual) Asymmetrical
FETFeature
-
Standard
DraintoSourceVoltage(Vdss)
-
30V
Current-ContinuousDrain(Id)@25°C
-
19A, 26A
RdsOn(Max)@IdVgs
-
5.2mOhm @ 20A, 10V
Vgs(th)(Max)@Id
-
2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
13nC @ 10V
InputCapacitance(Ciss)(Max)@Vds
-
820pF @ 15V
Power-Max
-
3.1W
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
