AON7408 vs AON7401
This in-depth comparison of the AON7401 and AON7408 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
PowerVDFN-8
Description
MOSFET P-CH 30V 12A/35A 8DFN
MOSFET N-CH 30V 10A/18A 8DFN
Part Status
Obsolete
-
Base Product Number
AON740
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 35A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
-
Rds On (Max) @ Id, Vgs
14mOhm @ 9A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
-
Vgs (Max)
±25V
-
Input Capacitance (Ciss) (Max) @ Vds
2600 pF @ 15 V
-
Power Dissipation (Max)
3.1W (Ta), 29W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Tape & Reel (TR)
-
ProductStatus
-
Not For New Designs
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
30 V
Current-ContinuousDrain(Id)@25°C
-
10A (Ta), 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
4.5V, 10V
RdsOn(Max)@IdVgs
-
20mOhm @ 10A, 10V
Vgs(th)(Max)@Id
-
2.6V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
8.6 nC @ 4.5 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
448 pF @ 15 V
PowerDissipation(Max)
-
3.1W (Ta), 11W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
