BC856BLT1G vs BC856BDW1T1G

This in-depth comparison of the BC856BLT1G and BC856BDW1T1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

BC856BLT1G

onsemi

Lifecycle
Active
Stock
5949 PCS
Package
SOT-23-3
Series
Transistors - Bipolar (BJT) - Single
+BOM RFQ
Part B

BC856BDW1T1G

onsemi

Lifecycle
Active
Stock
3990 PCS
Package
SOT-363-6
Series
Transistors - Bipolar (BJT) - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC856BLT1G BC856BDW1T1G
Part Status Active Active
Transistor Type PNP 2 PNP (Dual)
Current - Collector(Ic)(Max) 100 mA 100mA
Voltage - Collector Emitter Breakdown(Max) 65 V 65V
Vce Saturation(Max) @ Ib Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff(Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 380mW
Frequency - Transition 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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