BC857BDW1T1G vs BC857S

This in-depth comparison of the BC857BDW1T1G and BC857S provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BC857BDW1T1G

onsemi

Lifecycle: Active
Stock: 6653 PCS
Package: SC-70
Series: Transistors - Bipolar (BJT) - Arrays

+BOM RFQ

Part B

BC857S

onsemi

Lifecycle: Active
Stock: 7134 PCS
Series: Transistors - Bipolar (BJT) - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BC857BDW1T1G	BC857S
Supplier	-	Rochester Electronics, LLC
Series	-	Bulk
Transistor Type	2 PNP (Dual)	Active
Part Status	Active	-
Current - Collector(Ic)(Max)	100mA	-
Voltage - Collector Emitter Breakdown(Max)	45V	-
Vce Saturation(Max) @ Ib Ic	650mV @ 5mA, 100mA	-
Current - Collector Cutoff(Max)	15nA (ICBO)	-
DC Current Gain(h FE)(Min) @ Ic Vce	220 @ 2mA, 5V	-
Power - Max	380mW	-
Frequency - Transition	100MHz	-
Operating Temperature	-55°C ~ 150°C (TJ)	-
Mounting Type	Surface Mount	-

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