BC857BLT1G vs BC857BS

This in-depth comparison of the BC857BLT1G and BC857BS provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BC857BLT1G

onsemi

Lifecycle
Active
Stock
7181 PCS
Package
SOT-23-3
Series
Transistors - Bipolar (BJT) - Single
Part B

BC857BS

Yangzhou Yangjie Electronic Technology Co.,Ltd

Lifecycle
Active
Stock
1435 PCS
Package
SOT-363
Series
Transistors - Bipolar (BJT) - Arrays

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BC857BLT1G BC857BS
Part Status Active Active
Transistor Type PNP 2 PNP (Dual)
Current - Collector(Ic)(Max) 100 mA 100mA
Voltage - Collector Emitter Breakdown(Max) 45 V 45V
Vce Saturation(Max) @ Ib Ic 650mV @ 5mA, 100mA 300mV @ 500µA, 10mA
Current - Collector Cutoff(Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 300 mW 300mW
Frequency - Transition 100MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount