BSS138 vs BSS138LT1G Comparison

This in-depth comparison of the BSS138LT1G and BSS138 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
BSS138LT1G

+BOM

2952 PCS | onsemi
BSS138

+BOM

5301 PCS | Yangzhou Yangjie Electronic Technology Co.,Ltd
Package SOT-23-3 SOT-23
Description MOSFET N-CH 50V 200MA SOT23-3 N-CH MOSFET 50V 0.34A SOT-23-3L
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain(Id) @ 25°C 200mA (Ta) 340mA (Ta)
Drive Voltage(Max Rds On Min Rds On) 5V 4.5V, 10V
Rds On(Max) @ Id Vgs 3.5Ohm @ 200mA, 5V 2.5Ohm @ 300mA, 10V
Vgs(th)(Max) @ Id 1.5V @ 1mA 1.6V @ 250µA
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 50 pF @ 25 V 28.5 pF @ 25 V
Power Dissipation (Max) 225mW (Ta) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Gate Charge(Qg)(Max) @ Vgs - 1.7 nC @ 10 V
Comparison Model : BSS138LT1G BSS138

+BOM RFQ