BSS138W vs BSS138LT1G

This in-depth comparison of the BSS138W and BSS138LT1G provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BSS138W

onsemi

Lifecycle: Active
Stock: 7054 PCS
Package: SOT-323
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

BSS138LT1G

onsemi

Lifecycle: Active
Stock: 2952 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BSS138W	BSS138LT1G
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V	50 V
Current - Continuous Drain(Id) @ 25°C	210mA (Ta)	200mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	5V
Rds On(Max) @ Id Vgs	3.5Ohm @ 220mA, 10V	3.5Ohm @ 200mA, 5V
Vgs(th)(Max) @ Id	1.5V @ 1mA	1.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs	1.1 nC @ 10 V	-
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	38 pF @ 25 V	50 pF @ 25 V
Power Dissipation (Max)	340mW (Ta)	225mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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