BSS84 vs BSS84PH6327XTSA2

This in-depth comparison of the BSS84 and BSS84PH6327XTSA2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BSS84

ANBON SEMICONDUCTOR (INT'L) LIMITED

Lifecycle: Active
Stock: 3000 PCS
Package: SOT-23
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

BSS84PH6327XTSA2

Infineon Technologies

Lifecycle: Active
Stock: 6512 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BSS84	BSS84PH6327XTSA2
Series	-	SIPMOS®
Part Status	Active	Active
FET Type	-	P-Channel
Technology	-	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	-	60 V
Current - Continuous Drain(Id) @ 25°C	-	170mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	-	4.5V, 10V
Rds On(Max) @ Id Vgs	-	8Ohm @ 170mA, 10V
Vgs(th)(Max) @ Id	-	2V @ 20µA
Gate Charge(Qg)(Max) @ Vgs	-	1.5 nC @ 10 V
Vgs(Max)	-	±20V
Input Capacitance(Ciss)(Max) @ Vds	-	19 pF @ 25 V
Power Dissipation (Max)	-	360mW (Ta)
Operating Temperature	-	-55°C ~ 150°C (TJ)
Mounting Type	-	Surface Mount

Compare RFQ