BSS84LT1G vs BSS84PH6327XTSA2

This in-depth comparison of the BSS84LT1G and BSS84PH6327XTSA2 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

BSS84LT1G

onsemi

Lifecycle: Active
Stock: 6051 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

BSS84PH6327XTSA2

Infineon Technologies

Lifecycle: Active
Stock: 6512 PCS
Package: SOT-23-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	BSS84LT1G	BSS84PH6327XTSA2
Series	-	SIPMOS®
Part Status	Active	Active
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	50 V	60 V
Current - Continuous Drain(Id) @ 25°C	130mA (Ta)	170mA (Ta)
Drive Voltage(Max Rds On Min Rds On)	5V	4.5V, 10V
Rds On(Max) @ Id Vgs	10Ohm @ 100mA, 5V	8Ohm @ 170mA, 10V
Vgs(th)(Max) @ Id	2V @ 250µA	2V @ 20µA
Gate Charge(Qg)(Max) @ Vgs	-	1.5 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	30 pF @ 5 V	19 pF @ 25 V
Power Dissipation (Max)	225mW (Ta)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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