BYG10M-E3/TR vs BYG10D

This in-depth comparison of the BYG10M-E3/TR and BYG10D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

BYG10M-E3/TR

Vishay General Semiconductor - Diodes Division

Lifecycle
Active
Stock
4670 PCS
Package
DO-214AC
Series
Diodes - Rectifiers - Single
+BOM RFQ
Part B

BYG10D

Diotec Semiconductor

Lifecycle
Active
Stock
2111 PCS
Package
DO-214AC
Series
Diodes - Rectifiers - Single
+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification BYG10M-E3/TR BYG10D
Supplier Vishay General Semiconductor - Diodes Division DComponents
Part Status Active Active
Diode Type Avalanche Avalanche
Voltage - DC Reverse (Vr) (Max) 1000 V 200 V
Current - Average Rectified(Io) 1.5A 1.5A
Voltage - Forward (Vf) (Max) @ If 1.15 V @ 1.5 A 1.15 V @ 1.5 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 4 µs 1.5 µs
Current - Reverse Leakage @ Vr 1 µA @ 1000 V 5 µA @ 200 V
Mounting Type Surface Mount Surface Mount
Compare RFQ