CSD17556Q5B vs CSD17308Q3

This in-depth comparison of the CSD17556Q5B and CSD17308Q3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD17556Q5B

Texas Instruments

Lifecycle: Active
Stock: 5685 PCS
Package: TDFN-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

CSD17308Q3

Texas Instruments

Lifecycle: Active
Stock: 5348 PCS
Package: TDFN-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	CSD17556Q5B	CSD17308Q3
Series	NexFET™	NexFET™
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain(Id) @ 25°C	34A (Ta), 100A (Tc)	14A (Ta), 44A (Tc)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	3V, 8V
Rds On(Max) @ Id Vgs	1.4mOhm @ 40A, 10V	10.3mOhm @ 10A, 8V
Vgs(th)(Max) @ Id	1.65V @ 250µA	1.8V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	39 nC @ 4.5 V	5.1 nC @ 4.5 V
Vgs(Max)	±20V	+10V, -8V
Input Capacitance(Ciss)(Max) @ Vds	7020 pF @ 15 V	700 pF @ 15 V
Power Dissipation (Max)	3.1W (Ta), 191W (Tc)	2.7W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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