CSD18511Q5A vs CSD18503Q5A

This in-depth comparison of the CSD18511Q5A and CSD18503Q5A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

CSD18511Q5A

Texas Instruments

Lifecycle
Active
Stock
1931 PCS
Series
Transistors - FETs, MOSFETs - Single FETs, MOSFETs
+BOM RFQ
Part B

CSD18503Q5A

Texas Instruments

Lifecycle
Active
Stock
6240 PCS
Package
TDFN-8
Series
Transistors - FETs, MOSFETs - Single
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification CSD18511Q5A CSD18503Q5A
Series NexFET™ NexFET™
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain(Id) @ 25°C - 19A (Ta), 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) - 4.5V, 10V
Rds On(Max) @ Id Vgs - 4.3mOhm @ 22A, 10V
Vgs(th)(Max) @ Id - 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs - 32 nC @ 10 V
Vgs(Max) - ±20V
Input Capacitance(Ciss)(Max) @ Vds - 2640 pF @ 20 V
Power Dissipation (Max) 104W (Tc) 3.1W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number CSD18511 -
Current - Continuous Drain (Id) @ 25°C 159A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 3.5mOhm @ 24A, 4.5V -
Vgs(th) (Max) @ Id 2.45V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 10 V -
Packaging Cut Tape (CT), Tape & Reel (TR) -
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