DG211CSE vs DG211BDJ-E3

This in-depth comparison of the DG211CSE and DG211BDJ-E3 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
DG211CSE

+BOM

3786 PCS | Analog Devices Inc./Maxim Integrated
DG211BDJ-E3

+BOM

102 PCS | Vishay Siliconix
Package 16-SOIC (0.154, 3.90mm Width) 16-DIP (0.300, 7.62mm)
Description IC SWITCH QUAD SPST 16SOIC IC SWITCH QUAD SPST 16DIP
Supplier Analog Devices Inc./Maxim Integrated Vishay Siliconix
ProductStatus Obsolete Active
SwitchCircuit SPST - NC SPST - NC
Multiplexer/DemultiplexerCircuit 1:1 1:1
NumberofCircuits 4 4
On-StateResistance(Max) 175Ohm 85Ohm
Channel-to-ChannelMatching(ΔRon) - 2Ohm
Voltage-SupplySingle(V+) - 4.5V ~ 25V
Voltage-SupplyDual(V±) ±4.5V ~ 18V ±4.5V ~ 22V
SwitchTime(TonToff)(Max) 1µs, 500ns 300ns, 200ns
ChargeInjection - 1pC
ChannelCapacitance(CS(off)CD(off)) 5pF, 5pF 5pF, 5pF
Current-Leakage(IS(off))(Max) 5nA 500pA
Crosstalk -90dB @ 100kHz -95dB @ 100kHz
OperatingTemperature 0°C ~ 70°C (TA) -40°C ~ 85°C (TA)
MountingType Surface Mount Through Hole
Comparison Model : DG211CSE DG211BDJ-E3

+BOM RFQ