ECH8668-TL-H vs ECH8619-TL-E

This in-depth comparison of the ECH8668-TL-H and ECH8619-TL-E provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

ECH8668-TL-H

onsemi

Lifecycle: Active
Stock: 3 PCS
Package: 8-SMD, Flat Lead
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

ECH8619-TL-E

onsemi

Lifecycle: Active
Stock: 5463 PCS
Package: 8-SMD, Flat Lead
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	ECH8668-TL-H	ECH8619-TL-E
Supplier	onsemi	onsemi
Part Status	Obsolete	Obsolete
FET Type	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	60V
Current - Continuous Drain(Id) @ 25°C	7.5A, 5A	3A, 2A
Rds On(Max) @ Id Vgs	17mOhm @ 4A, 4.5V	93mOhm @ 1.5A, 10V
Gate Charge(Qg)(Max) @ Vgs	10.8nC @ 4.5V	12.8nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds	1060pF @ 10V	560pF @ 20V
Power - Max	1.5W	1.5W
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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