FDC6561AN vs FDC658AP
This in-depth comparison of the FDC658AP and FDC6561AN provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SSOT-6
SSOT-6
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET 2N-CH 30V 2.5A SSOT6
Series
PowerTrench®
PowerTrench®
ProductStatus
Active
Active
FETType
P-Channel
2 N-Channel (Dual)
Technology
MOSFET (Metal Oxide)
-
DraintoSourceVoltage(Vdss)
30 V
30V
Current-ContinuousDrain(Id)@25°C
4A (Ta)
2.5A
DriveVoltage(MaxRdsOnMinRdsOn)
4.5V, 10V
-
RdsOn(Max)@IdVgs
50mOhm @ 4A, 10V
95mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id
3V @ 250µA
3V @ 250µA
GateCharge(Qg)(Max)@Vgs
8.1 nC @ 5 V
3.2nC @ 5V
Vgs(Max)
±25V
-
InputCapacitance(Ciss)(Max)@Vds
470 pF @ 15 V
220pF @ 15V
PowerDissipation(Max)
1.6W (Ta)
-
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
MountingType
Surface Mount
Surface Mount
FETFeature
-
Logic Level Gate
Power-Max
-
700mW
