FDD8896 vs FDD8880

This in-depth comparison of the FDD8896 and FDD8880 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDD8896

onsemi

Lifecycle
Active
Stock
4510 PCS
Package
TO-252-3
Series
Transistors - FETs, MOSFETs - Single
Part B

FDD8880

onsemi

Lifecycle
Active
Stock
6387 PCS
Package
TO-252-3
Series
Transistors - FETs, MOSFETs - Single

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDD8896 FDD8880
Series PowerTrench® PowerTrench®
Part Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain(Id) @ 25°C 17A (Ta), 94A (Tc) 13A (Ta), 58A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On(Max) @ Id Vgs 5.7mOhm @ 35A, 10V 9mOhm @ 35A, 10V
Vgs(th)(Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 60 nC @ 10 V 31 nC @ 10 V
Vgs(Max) ±20V ±20V
Input Capacitance(Ciss)(Max) @ Vds 2525 pF @ 15 V 1260 pF @ 15 V
Power Dissipation (Max) 80W (Tc) 55W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount