FDG6321C vs FDG6302P

This in-depth comparison of the FDG6321C and FDG6302P provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDG6321C

onsemi

Lifecycle
Active
Stock
12407 PCS
Package
SC-88
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

FDG6302P

onsemi

Lifecycle
Active
Stock
5604 PCS
Package
SC-88
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDG6321C FDG6302P
Supplier onsemi onsemi
Part Status Active Obsolete
FET Type N and P-Channel 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 25V 25V
Current - Continuous Drain(Id) @ 25°C 500mA, 410mA 140mA
Rds On(Max) @ Id Vgs 450mOhm @ 500mA, 4.5V 10Ohm @ 140mA, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 2.3nC @ 4.5V 0.31nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds 50pF @ 10V 12pF @ 10V
Power - Max 300mW 300mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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