FDMS86520 vs FDMS8018
This in-depth comparison of the FDMS8018 and FDMS86520 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
PowerTDFN-8
Description
MOSFET N-CH 30V 30A/120A 8PQFN
MOSFET N-CH 60V 14A/42A 8PQFN
Series
PowerTrench®
PowerTrench®
Part Status
Active
-
Base Product Number
FDMS80
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
-
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 120A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
-
Rds On (Max) @ Id, Vgs
1.8mOhm @ 30A, 10V
-
Vgs(th) (Max) @ Id
3V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
5235 pF @ 15 V
-
Power Dissipation (Max)
2.5W (Ta), 83W (Tc)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Cut Tape (CT), Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
60 V
Current-ContinuousDrain(Id)@25°C
-
14A (Ta), 42A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
-
8V, 10V
RdsOn(Max)@IdVgs
-
7.4mOhm @ 14A, 10V
Vgs(th)(Max)@Id
-
4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
40 nC @ 10 V
Vgs(Max)
-
±20V
InputCapacitance(Ciss)(Max)@Vds
-
2850 pF @ 30 V
PowerDissipation(Max)
-
2.5W (Ta), 69W (Tc)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
