FDS6912A vs FDS6982S

This in-depth comparison of the FDS6912A and FDS6982S provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDS6912A

+BOM

2230 PCS | onsemi
FDS6982S

+BOM

3214 PCS | onsemi
Package SOIC-8
Description MOSFET 2N-CH 30V 6A 8SOIC MOSFET 2N-CH 30V 6.3A/8.6A 8SOIC
Series PowerTrench® PowerTrench®, SyncFET™
Part Status - Obsolete
Technology - MOSFET (Metal Oxide)
Configuration - 2 N-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) - 30V
Current - Continuous Drain (Id) @ 25°C - 6.3A, 8.6A
Rds On (Max) @ Id, Vgs - 28mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds - 2040pF @ 10V
Power - Max - 900mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Base Product Number - FDS69
ProductStatus Active -
FETType 2 N-Channel (Dual) -
FETFeature Logic Level Gate -
DraintoSourceVoltage(Vdss) 30V -
Current-ContinuousDrain(Id)@25°C 6A -
RdsOn(Max)@IdVgs 28mOhm @ 6A, 10V -
Vgs(th)(Max)@Id 3V @ 250µA -
GateCharge(Qg)(Max)@Vgs 8.1nC @ 5V -
InputCapacitance(Ciss)(Max)@Vds 575pF @ 15V -
Power-Max 900mW -
OperatingTemperature -55°C ~ 150°C (TJ) -
MountingType Surface Mount -
Comparison Model : FDS6912A FDS6982S

+BOM RFQ