FDS6982AS vs FDS6982S

This in-depth comparison of the FDS6982AS and FDS6982S provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDS6982AS

onsemi

Lifecycle
Active
Stock
7518 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
Part B

FDS6982S

onsemi

Lifecycle
Active
Stock
3214 PCS
Series
Transistors - FETs, MOSFETs - FET, MOSFET Arrays

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification FDS6982AS FDS6982S
Series PowerTrench®, SyncFET™ PowerTrench®, SyncFET™
Part Status Obsolete Obsolete
Technology - MOSFET (Metal Oxide)
Configuration - 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C - 6.3A, 8.6A
Rds On (Max) @ Id, Vgs - 28mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds - 2040pF @ 10V
Power - Max 900mW 900mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Base Product Number - FDS69
FET Type 2 N-Channel (Dual) -
Current - Continuous Drain(Id) @ 25°C 6.3A, 8.6A -
Rds On(Max) @ Id Vgs 28mOhm @ 6.3A, 10V -
Vgs(th)(Max) @ Id 3V @ 250µA -
Gate Charge(Qg)(Max) @ Vgs 15nC @ 10V -
Input Capacitance(Ciss)(Max) @ Vds 610pF @ 10V -