FDS6990A vs FDS6930A

This in-depth comparison of the FDS6990A and FDS6930A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FDS6990A

onsemi

Lifecycle: Active
Stock: 3513 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

FDS6930A

onsemi

Lifecycle: Active
Stock: 2195 PCS
Series: Transistors - FETs, MOSFETs - FET, MOSFET Arrays

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FDS6990A	FDS6930A
Supplier	onsemi	-
Series	PowerTrench®	PowerTrench®
Part Status	Obsolete	Obsolete
FET Type	2 N-Channel (Dual)	-
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	30V	30V
Current - Continuous Drain(Id) @ 25°C	7.5A	-
Rds On(Max) @ Id Vgs	18mOhm @ 7.5A, 10V	-
Vgs(th)(Max) @ Id	3V @ 250µA	-
Gate Charge(Qg)(Max) @ Vgs	17nC @ 5V	-
Input Capacitance(Ciss)(Max) @ Vds	1235pF @ 15V	-
Power - Max	900mW	900mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Technology	-	MOSFET (Metal Oxide)
Configuration	-	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	-	5.5A
Rds On (Max) @ Id, Vgs	-	40mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	-	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-	7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-	460pF @ 15V
Base Product Number	-	FDS6930

Compare RFQ