FDS9933A vs FDS9953A

This in-depth comparison of the FDS9933A and FDS9953A provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
FDS9933A

+BOM

7321 PCS | onsemi
FDS9953A

+BOM

6120 PCS | onsemi
Package SOIC-8
Description MOSFET 2P-CH 20V 3.8A 8SOIC MOSFET 2P-CH 30V 2.9A 8SOIC
Series PowerTrench® PowerTrench®
Part Status - Obsolete
Technology - MOSFET (Metal Oxide)
Configuration - 2 P-Channel (Dual)
FET Feature - Logic Level Gate
Drain to Source Voltage (Vdss) - 30V
Current - Continuous Drain (Id) @ 25°C - 2.9A
Rds On (Max) @ Id, Vgs - 130mOhm @ 1A, 10V
Vgs(th) (Max) @ Id - 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 3.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds - 185pF @ 15V
Power - Max - 900mW
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount
Base Product Number - FDS99
ProductStatus Active -
FETType 2 P-Channel (Dual) -
FETFeature Logic Level Gate -
DraintoSourceVoltage(Vdss) 20V -
Current-ContinuousDrain(Id)@25°C 3.8A -
RdsOn(Max)@IdVgs 75mOhm @ 3.8A, 4.5V -
Vgs(th)(Max)@Id 1.5V @ 250µA -
GateCharge(Qg)(Max)@Vgs 10nC @ 4.5V -
InputCapacitance(Ciss)(Max)@Vds 600pF @ 10V -
Power-Max 900mW -
OperatingTemperature -55°C ~ 150°C (TJ) -
MountingType Surface Mount -
Comparison Model : FDS9933A FDS9953A

+BOM RFQ