FDV301N vs FDV302P
This in-depth comparison of the FDV302P and FDV301N provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Package
SOT23-3
Description
MOSFET P-CH 25V 120MA SOT23
MOSFET N-CH 25V 220MA SOT23
Part Status
Obsolete
-
Base Product Number
FDV30
-
FET Type
P-Channel
-
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
-
Current - Continuous Drain (Id) @ 25°C
120mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
-
Rds On (Max) @ Id, Vgs
10Ohm @ 200mA, 4.5V
-
Vgs(th) (Max) @ Id
1.5V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs
0.31 nC @ 4.5 V
-
Vgs (Max)
-8V
-
Input Capacitance (Ciss) (Max) @ Vds
11 pF @ 10 V
-
Power Dissipation (Max)
350mW (Ta)
-
Operating Temperature
-55°C ~ 150°C (TJ)
-
Mounting Type
Surface Mount
-
Packaging
Tape & Reel (TR)
-
ProductStatus
-
Active
FETType
-
N-Channel
DraintoSourceVoltage(Vdss)
-
25 V
Current-ContinuousDrain(Id)@25°C
-
220mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)
-
2.7V, 4.5V
RdsOn(Max)@IdVgs
-
4Ohm @ 400mA, 4.5V
Vgs(th)(Max)@Id
-
1.06V @ 250µA
GateCharge(Qg)(Max)@Vgs
-
0.7 nC @ 4.5 V
Vgs(Max)
-
±8V
InputCapacitance(Ciss)(Max)@Vds
-
9.5 pF @ 10 V
PowerDissipation(Max)
-
350mW (Ta)
OperatingTemperature
-
-55°C ~ 150°C (TJ)
MountingType
-
Surface Mount
