FGH40N60SMDF vs FGH40N6S2D

This in-depth comparison of the FGH40N60SMDF and FGH40N6S2D provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

FGH40N60SMDF

onsemi

Lifecycle: Active
Stock: 3198 PCS
Package: TO-247
Series: Transistors - IGBTs - Single

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Part B

FGH40N6S2D

onsemi

Lifecycle: Active
Stock: 9943 PCS
Package: TO-247-3
Series: Transistors - IGBTs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	FGH40N60SMDF	FGH40N6S2D
Supplier	-	onsemi
Part Status	Active	Obsolete
Voltage - Collector Emitter Breakdown(Max)	600 V	600 V
Current - Collector(Ic)(Max)	80 A	75 A
Current - Collector Pulsed(Icm)	120 A	180 A
Vce(on)(Max) @ Vge Ic	2.5V @ 15V, 40A	2.7V @ 15V, 20A
Power - Max	349 W	290 W
Switching Energy	1.3mJ (on), 260µJ (off)	115µJ (on), 195µJ (off)
Input Type	Standard	Standard
Gate Charge	119 nC	35 nC
Td(on / off) @ 25°C	12ns/92ns	8ns/35ns
Test Condition	400V, 40A, 6Ohm, 15V	390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr)	90 ns	48 ns
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole
IGBT Type	Field Stop	-

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