IR2112STRPBF vs IR2111STR Comparison

This in-depth comparison of the IR2112STRPBF and IR2111STR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
IR2112STRPBF

+BOM

3055 PCS | Infineon Technologies
IR2111STR

+BOM

8416 PCS | Infineon Technologies
Package SOIC 16W SOIC-8
Description IC GATE DRVR HI/LOW SIDE 16SOIC IC GATE DRVR HALF-BRIDGE 8SOIC
Part Status Active Obsolete
Driven Configuration High-Side or Low-Side Half-Bridge
Channel Type Independent Synchronous
Number of Drivers 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V
Logic Voltage - VILVIH 6V, 9.5V 8.3V, 12.6V
Current - Peak Output(Source Sink) 250mA, 500mA 250mA, 500mA
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max(Bootstrap) 600 V 600 V
Rise / Fall Time(Typ) 80ns, 40ns 80ns, 40ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Comparison Model : IR2112STRPBF IR2111STR

+BOM RFQ