IR2110S vs IR2117STRPBF

This in-depth comparison of the IR2110S and IR2117STRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IR2110S

Infineon Technologies

Lifecycle
Active
Stock
5478 PCS
Series
Power Management (PMIC) - Gate Drivers
+BOM RFQ
Part B

IR2117STRPBF

Infineon Technologies

Lifecycle
Active
Stock
1294 PCS
Package
SOIC 8N
Series
PMIC - Gate Drivers
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IR2110S IR2117STRPBF
Part Status Obsolete Active
Base Product Number IR2110 -
Digi Key Programmable Not Verified -
Driven Configuration Half-Bridge High-Side
Channel Type Independent Single
Number of Drivers 2 1
Gate Type IGBT, MOSFET (N-Channel) IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V -
Current - Peak Output (Source, Sink) 2A, 2A -
Input Type Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 500 V -
Rise / Fall Time (Typ) 25ns, 17ns -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Packaging Tube -
Logic Voltage - VILVIH - 6V, 9.5V
Current - Peak Output(Source Sink) - 250mA, 500mA
High Side Voltage - Max(Bootstrap) - 600 V
Rise / Fall Time(Typ) - 80ns, 40ns
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