IR2301STRPBF vs IR2301STR

This in-depth comparison of the IR2301STRPBF and IR2301STR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IR2301STRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6145 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

Part B

IR2301STR

Infineon Technologies

Lifecycle: Active
Stock: 2172 PCS
Package: SOIC-8
Series: PMIC - Gate Drivers

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IR2301STRPBF	IR2301STR
Part Status	Active	Obsolete
Driven Configuration	High-Side or Low-Side	High-Side or Low-Side
Channel Type	Independent	Independent
Number of Drivers	2	2
Gate Type	IGBT, N-Channel MOSFET	IGBT, N-Channel MOSFET
Voltage - Supply	5V ~ 20V	5V ~ 20V
Logic Voltage - VILVIH	0.8V, 2.9V	0.8V, 2.9V
Current - Peak Output(Source Sink)	200mA, 350mA	200mA, 350mA
Input Type	Non-Inverting	Non-Inverting
High Side Voltage - Max(Bootstrap)	600 V	600 V
Rise / Fall Time(Typ)	130ns, 50ns	130ns, 50ns
Operating Temperature	-40°C ~ 150°C (TJ)	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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