IRF4905SPBF vs IRF4905STRRPBF

This in-depth comparison of the IRF4905SPBF and IRF4905STRRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF4905SPBF

Infineon Technologies

Lifecycle: Active
Stock: 3886 PCS
Package: TO-252
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF4905STRRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6200 PCS
Package: TO-263-3
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF4905SPBF	IRF4905STRRPBF
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Not For New Designs
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	55 V
Current - Continuous Drain(Id) @ 25°C	42A (Tc)	42A (Tc)
Drive Voltage(Max Rds On Min Rds On)	10V	10V
Rds On(Max) @ Id Vgs	20mOhm @ 42A, 10V	20mOhm @ 42A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	180 nC @ 10 V	180 nC @ 10 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	3500 pF @ 25 V	3500 pF @ 25 V
Power Dissipation (Max)	170W (Tc)	170W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ