IRF5851TRPBF vs IRF5810TRPBF

This in-depth comparison of the IRF5851TRPBF and IRF5810TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF5851TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 8874 PCS
Package: TSOT-23-6
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF5810TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 6356 PCS
Package: TSOT-23-6
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF5851TRPBF	IRF5810TRPBF
Supplier	Infineon Technologies	Infineon Technologies
Series	HEXFET®	HEXFET®
Part Status	Obsolete	Obsolete
FET Type	N and P-Channel	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	20V	20V
Current - Continuous Drain(Id) @ 25°C	2.7A, 2.2A	2.9A
Rds On(Max) @ Id Vgs	90mOhm @ 2.7A, 4.5V	90mOhm @ 2.9A, 4.5V
Vgs(th)(Max) @ Id	1.25V @ 250µA	1.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	6nC @ 4.5V	9.6nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	400pF @ 15V	650pF @ 16V
Power - Max	960mW	960mW
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

Compare RFQ