IRF640NPBF vs IRF640PBF
This in-depth comparison of the IRF640PBF and IRF640NPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220-3
TO-220AB
Description
MOSFET N-CH 200V 18A TO220AB
MOSFET N-CH 200V 18A TO220AB
ProductStatus
Active
Active
FETType
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
200 V
200 V
Current-ContinuousDrain(Id)@25°C
18A (Tc)
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
10V
10V
RdsOn(Max)@IdVgs
180mOhm @ 11A, 10V
150mOhm @ 11A, 10V
Vgs(th)(Max)@Id
4V @ 250µA
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
70 nC @ 10 V
67 nC @ 10 V
Vgs(Max)
±20V
±20V
InputCapacitance(Ciss)(Max)@Vds
1300 pF @ 25 V
1160 pF @ 25 V
PowerDissipation(Max)
125W (Tc)
150W (Tc)
OperatingTemperature
-55°C ~ 150°C (TJ)
-55°C ~ 175°C (TJ)
MountingType
Through Hole
Through Hole
Series
-
HEXFET®
