IRF640NSTRLPBF vs IRF640
This in-depth comparison of the IRF640 and IRF640NSTRLPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
TO-220-3
TO-263-3
Description
MOSFET N-CH 200V 18A TO220AB
HEXFET POWER MOSFET
Series
MESH OVERLAY™
HEXFET®
ProductStatus
Obsolete
Active
FETType
N-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)
200 V
200 V
Current-ContinuousDrain(Id)@25°C
18A (Tc)
18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)
10V
10V
RdsOn(Max)@IdVgs
180mOhm @ 9A, 10V
150mOhm @ 11A, 10V
Vgs(th)(Max)@Id
4V @ 250µA
4V @ 250µA
GateCharge(Qg)(Max)@Vgs
72 nC @ 10 V
67 nC @ 10 V
Vgs(Max)
±20V
±20V
InputCapacitance(Ciss)(Max)@Vds
1560 pF @ 25 V
1160 pF @ 25 V
PowerDissipation(Max)
125W (Tc)
150W (Tc)
OperatingTemperature
150°C (TJ)
-55°C ~ 175°C (TJ)
MountingType
Through Hole
Surface Mount
