IRF7103TRPBF vs IRF7106

This in-depth comparison of the IRF7103TRPBF and IRF7106 provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7103TRPBF

Infineon Technologies

Lifecycle
Active
Stock
3890 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7106

Infineon Technologies

Lifecycle
Active
Stock
7424 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

Need help validating a replacement?

Send your BOM and application constraints for technical and sourcing review.

RFQ Contact technical support

Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7103TRPBF IRF7106
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Active Obsolete
FET Type 2 N-Channel (Dual) N and P-Channel
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 50V 20V
Current - Continuous Drain(Id) @ 25°C 3A 3A, 2.5A
Rds On(Max) @ Id Vgs 130mOhm @ 3A, 10V 125mOhm @ 1A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 30nC @ 10V 25nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 290pF @ 25V 300pF @ 15V
Power - Max 2W 2W
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C ~ 150°C (TJ) -
Compare RFQ