IRF7317TRPBF vs IRF7306TR

This in-depth comparison of the IRF7317TRPBF and IRF7306TR provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

ISO9001 Quality Control ISO45001 ISO14001 100% Genuine
Part A

IRF7317TRPBF

Infineon Technologies

Lifecycle
Active
Stock
2170 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ
Part B

IRF7306TR

Infineon Technologies

Lifecycle
Active
Stock
9561 PCS
Package
SOIC-8
Series
Transistors - FETs, MOSFETs - Arrays
+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification IRF7317TRPBF IRF7306TR
Supplier - Infineon Technologies
Series HEXFET® HEXFET®
Part Status Active Obsolete
FET Type N and P-Channel 2 P-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 30V
Current - Continuous Drain(Id) @ 25°C 6.6A, 5.3A 3.6A
Rds On(Max) @ Id Vgs 29mOhm @ 6A, 4.5V 100mOhm @ 1.8A, 10V
Vgs(th)(Max) @ Id 700mV @ 250µA 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 27nC @ 4.5V 25nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 900pF @ 15V 440pF @ 25V
Power - Max 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
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