IRF7380PBF vs IRF7304QTRPBF

This in-depth comparison of the IRF7380PBF and IRF7304QTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7380PBF

Infineon Technologies

Lifecycle: Active
Stock: 3152 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

Part B

IRF7304QTRPBF

Infineon Technologies

Lifecycle: Active
Stock: 9130 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Arrays

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7380PBF	IRF7304QTRPBF
Supplier	Infineon Technologies,Rochester Electronics, LLC	Infineon Technologies
Part Status	Discontinued at Digi-Key	Obsolete
FET Type	2 N-Channel (Dual)	2 P-Channel (Dual)
FET Feature	Logic Level Gate	Logic Level Gate
Drain to Source Voltage (Vdss)	80V	20V
Current - Continuous Drain(Id) @ 25°C	3.6A	4.3A
Rds On(Max) @ Id Vgs	73mOhm @ 2.2A, 10V	90mOhm @ 2.2A, 4.5V
Vgs(th)(Max) @ Id	4V @ 250µA	700mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs	23nC @ 10V	22nC @ 4.5V
Input Capacitance(Ciss)(Max) @ Vds	660pF @ 25V	610pF @ 15V
Power - Max	2W	2W
Mounting Type	Surface Mount	Surface Mount
Series	HEXFET®	-
Operating Temperature	-55°C ~ 150°C (TJ)	-

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