IRF7424TRPBF vs IRF7413ZTRPBF

This in-depth comparison of the IRF7424TRPBF and IRF7413ZTRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7424TRPBF

International Rectifier

Lifecycle: Active
Stock: 1921 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7413ZTRPBF

Infineon Technologies

Lifecycle: Active
Stock: 2446 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7424TRPBF	IRF7413ZTRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	P-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V
Current - Continuous Drain(Id) @ 25°C	11A (Ta)	13A (Ta)
Drive Voltage(Max Rds On Min Rds On)	4.5V, 10V	4.5V, 10V
Rds On(Max) @ Id Vgs	13.5mOhm @ 11A, 10V	10mOhm @ 13A, 10V
Vgs(th)(Max) @ Id	2.5V @ 250µA	2.25V @ 25µA
Gate Charge(Qg)(Max) @ Vgs	110 nC @ 10 V	14 nC @ 4.5 V
Vgs(Max)	±20V	±20V
Input Capacitance(Ciss)(Max) @ Vds	4030 pF @ 25 V	1210 pF @ 15 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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