IRF7470TRPBF vs IRF7406TRPBF Comparison
This in-depth comparison of the IRF7406TRPBF and IRF7470TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application. For more information, refer to their datasheets or contact our sales team for assistance in selecting the right part for your design.
Specifications
Package
SOIC-8
SOIC-8
Description
MOSFET P-CH 30V 5.8A 8SO
MOSFET N-CH 40V 10A 8SO
Series
HEXFET®
HEXFET®
Part Status
Last Time Buy
Active
FET Type
P-Channel
N-Channel
Technology
MOSFET (Metal Oxide)
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
40 V
Current - Continuous Drain(Id) @ 25°C
5.8A (Ta)
10A (Ta)
Drive Voltage(Max Rds On Min Rds On)
4.5V, 10V
2.8V, 10V
Rds On(Max) @ Id Vgs
45mOhm @ 2.8A, 10V
13mOhm @ 10A, 10V
Vgs(th)(Max) @ Id
1V @ 250µA
2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs
59 nC @ 10 V
44 nC @ 4.5 V
Vgs(Max)
±20V
±12V
Input Capacitance(Ciss)(Max) @ Vds
1100 pF @ 25 V
3430 pF @ 20 V
Power Dissipation (Max)
2.5W (Ta)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Surface Mount
