IRF7495TRPBF vs IRF7470TRPBF

This in-depth comparison of the IRF7495TRPBF and IRF7470TRPBF provides valuable insights into their specifications and key features. We cover important factors in detail, including RoHS compliance, REACH status, series, mounting style, package type, and other relevant characteristics. Presenting the differences side by side simplifies component selection, making it easier for you to select the best option for your specific application.

Technical review by ETEI Component Engineering Source: manufacturer documentation

Parts at a glance

Part A

IRF7495TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 5805 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

Part B

IRF7470TRPBF

Infineon Technologies

Lifecycle: Active
Stock: 7099 PCS
Package: SOIC-8
Series: Transistors - FETs, MOSFETs - Single

+BOM RFQ

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Full specification comparison

Use manufacturer datasheets as the final authority.

Specification	IRF7495TRPBF	IRF7470TRPBF
Series	HEXFET®	HEXFET®
Part Status	Active	Active
FET Type	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	40 V
Current - Continuous Drain(Id) @ 25°C	7.3A (Ta)	10A (Ta)
Drive Voltage(Max Rds On Min Rds On)	10V	2.8V, 10V
Rds On(Max) @ Id Vgs	22mOhm @ 4.4A, 10V	13mOhm @ 10A, 10V
Vgs(th)(Max) @ Id	4V @ 250µA	2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs	51 nC @ 10 V	44 nC @ 4.5 V
Vgs(Max)	±20V	±12V
Input Capacitance(Ciss)(Max) @ Vds	1530 pF @ 25 V	3430 pF @ 20 V
Power Dissipation (Max)	2.5W (Ta)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount

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